Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 655V |
| Current - Continuous Drain(Id) | 30A |
| RDS(on) | 120mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Output Capacitance(Coss) | 89pF |
| Input Capacitance(Ciss) | 2.657nF |
| Gate Charge(Qg) | 55.4nC@10V |
| Description | N-Channel 655V 30A Surface Mount TOLL-8L |
| Mfr. Part # | ASR65R120EFD |
| Package | TOLL-8L |
| Model Number | ASR65R120EFD |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 655V | Current - Continuous Drain(Id) | 30A |
| RDS(on) | 120mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | Output Capacitance(Coss) | 89pF |
| Input Capacitance(Ciss) | 2.657nF | Gate Charge(Qg) | 55.4nC@10V |
| Description | N-Channel 655V 30A Surface Mount TOLL-8L | Mfr. Part # | ASR65R120EFD |
| Package | TOLL-8L | Model Number | ASR65R120EFD |
This series of N-Channel enhancement mode MOSFETs, including models ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, and ASB65R120EFD, offers a low drain-source on-resistance (RDS(ON) = 0.105 typ.) and easy gate control. Designed for high-efficiency power conversion, these MOSFETs are suitable for applications such as Boost PFC switches, Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies. Key application areas include Server power, Telecom power, EV charging, Solar inverters, and UPS systems.
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|---|
| ASW65R120EFD | TO247 | ASW65R120EFD | 700 | 120 | 55.4 | 90 | 50 |
| ASA65R120EFD | TO220F | ASA65R120EFD | 700 | 120 | 55.4 | 90 | 50 |
| ASR65R120EFD | TOLL-8L | ASR65R120EFD | 700 | 120 | 55.4 | 90 | 50 |
| ASB65R120EFD | TO263 | ASB65R120EFD | 700 | 120 | 55.4 | 90 | 50 |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | - 30 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 90 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 1216 | mJ | Tc=25,VDD=50V, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - 10.9 | A | Tc=25,VDD=50V,L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 36.2 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 to 30 | V | AC (f>1 Hz) |
| Power dissipation (TO247) | Ptot | - 277.8 | W | TC=25C |
| Power dissipation (TO220F) | Ptot | - 36.5 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | |
| Operating junction temperature | Tj | -55 to 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - 50 | V/ns | VDS=400V, ISD<= ID, Tj=25C |
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3 to 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 2 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | +/-100 | nA | VGS=+/-30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.105 to 0.120 | VGS=10V, ID=14A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 12.6 | f=1MHz, open drain | |
| Transconductance | Gfs | 29.2 | S | VDS=20V, ID=15A |
| Input capacitance | Ciss | 2657 | pF | VGS=0V, VDS=100V, f=1MHz |
| Output capacitance | Coss | 89 | pF | VGS=0V, VDS=100V, f=1MHz |
| Reverse transfer capacitance | Crss | 2 | pF | VGS=0V, VDS=100V, f=1MHz |
| Turn-on delay time | td(on) | 29.6 | ns | VDD=400V,VGS=10V,ID=19A, RG=2 |
| Rise time | tr | 31.3 | ns | VDD=400V,VGS=10V,ID=19A, RG=2 |
| Turn-off delay time | td(off) | 94.6 | ns | VDD=400V,VGS=10V,ID=19A, RG=2 |
| Fall time | tf | 9.1 | ns | VDD=400V,VGS=10V,ID=19A, RG=2 |
| Gate to source charge | Qgs | 15 | nC | VDD=400V, ID=19A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 20.2 | nC | VDD=400V, ID=19A, VGS=0 to 10V |
| Gate charge total | Qg | 55.4 | nC | VDD=400V, ID=19A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 5.9 | V | VDD=400V, ID=19A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.67 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 136.7 | ns | VR=400V, IF=17A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | 0.741 | uC | VR=400V, IF=17A,diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 10.28 | A | VR=400V, IF=17A,diF/dt=100A/s |
| Thermal resistance, junction - case (TO220F) | RthJC | 3.4 | C/W | |
| Thermal resistance, junction - ambient (TO220F) | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO247,TOLL,TO263) | RthJC | 0.45 | C/W | |
| Thermal resistance, junction - ambient (TO247,TOLL,TO263) | RthJA | 57 | C/W | device on PCB, minimal footprint |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!