AI CHIPLINK LIMITED
Products
Manufacturer of a wide range of products which include LM324DR,AZV358MMTR-G1,TGF2953,etc
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| Category | Integrated Circuits (ICs) Linear Amplifiers Instrumentation, OP Amps, Buffer Amps |
| Current - Output / Channel | 30 mA |
| Amplifier Type | General Purpose |
| Product Status | Active |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Series | - |
| Voltage - Supply Span (Min) | 3 V |
| Supplier Device Package | 14-SOIC |
| Output Type | - |
| Voltage - Supply Span (Max) | 30 V |
| Mfr | Texas Instruments |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Current - Supply | 1.4mA (x4 Channels) |
| Package / Case | 14-SOIC (0.154", 3.90mm Width) |
| Slew Rate | 0.5V/µs |
| Current - Input Bias | 20 nA |
| Voltage - Input Offset | 3 mV |
| Number of Circuits | 4 |
| Gain Bandwidth Product | 1.2 MHz |
| Base Product Number | LM324 |
| Description | IC OPAMP GP 4 CIRCUIT 14SOIC |
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| Category | Integrated Circuits (ICs) Linear Amplifiers Instrumentation, OP Amps, Buffer Amps |
| Current - Output / Channel | 60 mA |
| Amplifier Type | General Purpose |
| Product Status | Active |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Series | - |
| Voltage - Supply Span (Min) | 2.7 V |
| Supplier Device Package | 8-MSOP |
| Output Type | Rail-to-Rail |
| Voltage - Supply Span (Max) | 5.5 V |
| Mfr | Diodes Incorporated |
| Operating Temperature | -40°C ~ 85°C |
| Current - Supply | 210µA (x2 Channels) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Slew Rate | 1V/µs |
| Current - Input Bias | 15 nA |
| Voltage - Input Offset | 1.7 mV |
| Number of Circuits | 2 |
| Gain Bandwidth Product | 1 MHz |
| Base Product Number | AZV358 |
| Description | IC OPAMP GP 2 CIRCUIT 8MSOP |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | SMD/SMT |
| Gain | 18.2 dB |
| Transistor Type | HEMT |
| Output Power | 41.6 dBm |
| Package / Case | Die |
| Maximum Operating Temperature | + 150 C |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Packaging | Waffle |
| Maximum Drain Gate Voltage | 100 V |
| Id - Continuous Drain Current | 820 mA |
| Pd - Power Dissipation | 17 W |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | SMD/SMT |
| Gain | 19 dB |
| Transistor Type | HEMT |
| Output Power | 24 W |
| Package / Case | QFN-8 |
| Maximum Operating Temperature | + 85 C |
| Vds - Drain-Source Breakdown Voltage | 28 V |
| Packaging | Tray |
| Id - Continuous Drain Current | 817 mA |
| Vgs - Gate-Source Breakdown Voltage | 100 V |
| Pd - Power Dissipation | 28.8 W |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | SMD/SMT |
| Gain | 17.1 dB |
| Transistor Type | HEMT |
| Pd - Power Dissipation | 15.3 W |
| Package / Case | QFN-EP-16 |
| Output Power | 11 W |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Packaging | Tray |
| Id - Continuous Drain Current | 557 mA |
| Vgs - Gate-Source Breakdown Voltage | - 2.7 V |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | Screw |
| Gain | 20 dB |
| Transistor Type | HEMT |
| Output Power | 70 W |
| Package / Case | NI-360 |
| Maximum Operating Temperature | + 85 C |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Packaging | Tray |
| Id - Continuous Drain Current | 2.5 A |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Pd - Power Dissipation | 64 W |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | SMD/SMT |
| Gain | 22 dB |
| Transistor Type | HEMT |
| Output Power | 180 W |
| Package / Case | NI400-2 |
| Maximum Operating Temperature | + 85 C |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Packaging | Waffle |
| Maximum Drain Gate Voltage | 55 V |
| Id - Continuous Drain Current | 360 mA |
| Pd - Power Dissipation | 60.9 W |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | SMD/SMT |
| Gain | 15 dB |
| Transistor Type | HEMT |
| Pd - Power Dissipation | 28 W |
| Output Power | 17 W |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Packaging | Tray |
| Id - Continuous Drain Current | 5 A |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN |
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| Transistor Polarity | N-Channel |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Mounting Style | SMD/SMT |
| Gain | 11 dB |
| Transistor Type | HEMT |
| Output Power | 19 W |
| Package / Case | QFN-20 |
| Maximum Operating Temperature | + 225 C |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Packaging | Tray |
| Id - Continuous Drain Current | 1.3 A |
| Vgs - Gate-Source Breakdown Voltage | - 2.7 V |
| Pd - Power Dissipation | 33 W |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB |
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| Packaging | Tray |
| Technology | GaN SiC |
| Product Category | RF JFET Transistors |
| Manufacturer | Qorvo |
| Description | RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz |
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