HongAn Microwave Co., Ltd.
| Frequency Range | 0.01 - 6.0 GHz |
| Substrate Doping Concentration | 1e15 cm^-3 |
| Gate Width | 10 µm |
| Gate Material | Polysilicon |
| Design Architecture | Symmetrical Double-Sided Bordered |
| Adhesive Process | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Payment Terms | L/C,D/A,T/T,D/P, |
| Rated Voltage | 50 V |
| Brand Name | Hoan |
| Model Number | HACC102S30V500 |
| Place of Origin | china |
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Product Specification
| Frequency Range | 0.01 - 6.0 GHz | Substrate Doping Concentration | 1e15 cm^-3 |
| Gate Width | 10 µm | Gate Material | Polysilicon |
| Design Architecture | Symmetrical Double-Sided Bordered | Adhesive Process | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Payment Terms | L/C,D/A,T/T,D/P, | Rated Voltage | 50 V |
| Brand Name | Hoan | Model Number | HACC102S30V500 |
| Place of Origin | china | ||
| High Light | High K Dielectric Single Layer Capacitor ，1000pF DC Block Capacitor ，50V DC Block Capacitor | ||
HACC102S30V500 Double-Sided Bordered SLC 1000pF 50V (0.01-6GHz) High K Dielectric
High-Frequency Technical Summary
The HACC102S30V500 is an ultra-high capacitance density, symmetrical Double-Sided Bordered Single Layer Ceramic Capacitor (SLC). This model is engineered specifically for low-to-medium frequency RF bypass filtering, power distribution network (PDN) decoupling, and broadband noise suppression up to 6.0 GHz (covering UHF, L, S, and C microwave bands). Delivering a massive 1000 pF (1 nF) ± 20% capacitance, a compact 0.76 mm × 0.76 mm footprint, and a voltage rating of 50 V, this capacitor is highly suitable for high-density National security radar subassemblies, fiber-optic transceivers, and microwave power amplifier (PA) modules.
What sets the HACC102S30V500 apart is its symmetrical double-sided bordered architecture combined with a high-dielectric-constant (high-K) ceramic body. Both the top and bottom electrodes feature a clean ceramic border margin. This symmetric structure eliminates top/bottom orientation requirements during pick-and-place, which significantly boosts automated assembly throughput and eliminates manual flipping errors.
Key Performance Advantages
Symmetrical Double-Sided Border (DSB): Eliminates top-vs-bottom mounting orientation issues, enabling ultra-fast automated die attachment and picking.
Dual-Side Epoxy Climb Protection: The ceramic border margins on both top and bottom electrodes act as a physical dam to stop conductive silver epoxy from climbing the sidewall, preventing short-circuits.
Advanced Thin-Film Metallization System: Utilizes a highly robust TaN/TiW/Ni/Au thin-film stack on both faces, offering exceptional thermal stability, anti-migration protection, and resistance to solder leaching.
Ultra-High Capacitance Density (1000 pF / 1 nF): Packaged in a compact 30 mil × 30 mil (0.76 mm × 0.76 mm) footprint, it provides a massive reservoir for decoupling without sacrificing physical space.
High Shear Strength & Thermal Dissipation: The larger 30 mil mounting base provides greater bonding contact area, yielding exceptionally high mechanical shear strength and enhanced heat dissipation.
Overall Dimensions
comprehensive Parameter Datasheet
| Specifications Category | Technical Parameter Name | Guaranteed Values | Testing / Measurement Conditions |
| Electrical Specs | Nominal Capacitance | 1000/1 | pF /nF (+20% Tolerance @ 1kHz,1Vrms, 25°C) |
| Rated Working Voltage (DC) | 50 | V (Maximum continuous rating) | |
| Dissipation Factor (DF) | ≤2.5% | Tested at 1 kHz, 1.0 Vrms, 25°C | |
| Insulation Resistance (IR) | ≥104MΩ | Tested at rated voltage DC, 25°C | |
| Recommended Frequency Band | 0.01-6.0 | GHz (Broadband Coupling andBypass Filtering) | |
| Physical Geometry | Outline Dimensions | 0.76 x 0.76 x 0.15 | mm (Length x Width x Height/ 30 x 30 x 6 mil) |
| Design Architecture | Double-Sided Bordered | Equal bare ceramic margin borders on both faces | |
| Metallization Stack | Top & Bottom Metallurgy | TaN/TiW/Ni/Au | Symmetrical thin-film stack on both surfaces |
| Outer Gold Thickness (Au) | ≥2.5 | um (Minimum thickness, wire- bond optimized) | |
| Assembly Processes | Mount Adhesion | Conductive Epoxy /Solder | Suitable for silver epoxy H20E / AuSn eutectic |
| Interconnect Connection | Gold Wire /Ribbon Bond | Thermosonic gold wire bonding compatible | |
| Reliability & Quality | Operating Temperature | -55 to +125 | ℃ (Industrial & National security Grade) |
| Storage Temperature & RH | 20-25°C,40%-60% RH | Cleanroom environment | |
| Guaranteed Shelf Life | 1 | Year (Under optimal storage conditions) |
Symmetrical Thin-Film Metallization Stack Engineering
To ensure long-term reliability under National security-grade thermal cycling and high-humidity conditions, theHACC102S30V500 utilizes a symmetrical, vacuum-sputtered thin-film stack on both top and bottom:
| Metal Layer | Material | Standard Layer Thickness | Metallurgical Function & Engineering Value |
| Adhesion Layer | Tantalum Nitride (TaN) | Sputtered Base | Provides a highly stable, oxygen-blocking chemical bondto the ceramic substrate; prevents peeling under thermal stress. |
| Barrier Layer | Titanium-Tungsten (TiW) | Sputtered Barrier | Acts as a high-density diffusion barrier that preventsnickel and gold atoms from migrating into the ceramic dielectric. |
| Barrier Layer | Nickel (Ni) | Sputtered Sacrificial | Serves as a solder leach-resistant barrier; prevents goldleaching or scavenging during high-temperature solder reflow. |
| Bonding Finish | Gold (Au) | ≥ 2.5 μm | Provides a highly conductive, oxide-free surface optimized for both gold wire thermosonic bonding and silver-filled epoxy attachment. |
Comparative Technical Matrix (HACC102S30V500 vs. Other SLC Designs)
This matrix compares the assembly and electrical performance of diferent single-layer ceramic capacitor designs:
| Engineering Parameter | Double-Sided Bordered (HACC102S30V500) | Single-Sided Bordered SLC | Standard Borderless SLC |
| Symmetry (Orientation) | Symmetrical. Top and bottomare identical. No flipping needed. | Asymmetric. Must verifytop/bottom side before mounting. | Asymmetric. Must verifytop/bottom side before mounting. |
| Top Side Epoxy Satety | Outstanding. Bare ceramicmargin stops epoxy shorting topsurface. | Outstanding. Bare ceramic margin stops epoxy shorting top surface | Poor. Gold covers 100%of top, leading to highrisk of surface shorts. |
| Bottom Side Epoxy Safety | Outstanding. Exposed ceramicborder halts epoxy climb at the base. | Moderate. Bottom goldcovers 100% of the base;epoxy climbs easily. | Poor. Solder/epoxy caneasily climb up the rawside walls. |
| Automated Assembly Speed | Maximum. High-speed pick-and-place with no visual orientation checking. | Medium. Automation requires camera inspection to detect top/bottom. | Medium. Requires vision inspection to orient before placement. |
| Solder Leach Resistance | Excellent (Ni-Au Finish). | Moderate to Good(Depending on barrier). | Moderate to Good (Depending on barrier). |
S-Parameter Engineering & Sub-Millimeter Assembly Guide
To maximize high-frequency coupling and bypass efficiency while preventing mechanical damage, assembly engineers must adhere to the following guidelines:
Epotek H20E Conductive Silver Epoxy SOP
Adhesive Specification: Use high-reliability, low-outgassing conductive silver epoxy (e.g., Epotek H20E).
Dispensing Guidelines: Apply a microscopic dot of epoxy. Thanks to the bottom ceramic border on the HACC102S30V500, the epoxy is physically contained within the bonding pad, preventing short-circuits.
Thermal Cure Profile: Cure at 120°C for 30 minutes (or alternatively 150°C for 15 minutes) with a slow-ramp cool-down to eliminate thermal shock on the ceramic substrate.
Gold Wire & Ribbon Bonding Constraints
Bonding Method: Compatible with thermosonic gold wire bonding (ball-stitch or wedge-wedge) and gold ribbon bonding.
Safe Bonding Clearance: The bonding wedge or capillary tip must land on the top gold pad at least 25 µm away from the electrode border edge. Bonding too close to the ceramic border will cause localized shearing forces, risking gold peeling or micro-cracks in the dielectric.
Bonding Force: Control capillary pressure to prevent micro-fracturing the thin 0.15 mm ceramic wafer.
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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