| Type | Metal Film Resistor |
| Resistance | 120Ω |
| Power(Watts) | 2W |
| Temperature Coefficient | ±300ppm/℃ |
| Tolerance | ±5% |
| Description | Metal Film Resistor 120Ω 2W ±300ppm/℃ ±5% Through Hole,D4xL12mm Through Hole Resistors RoHS |
| Mfr. Part # | MOS2CT52A121J |
| Package | Through Hole,D4xL12mm |
| Model Number | MOS2CT52A121J |
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Product Specification
| Type | Metal Film Resistor | Resistance | 120Ω |
| Power(Watts) | 2W | Temperature Coefficient | ±300ppm/℃ |
| Tolerance | ±5% | Description | Metal Film Resistor 120Ω 2W ±300ppm/℃ ±5% Through Hole,D4xL12mm Through Hole Resistors RoHS |
| Mfr. Part # | MOS2CT52A121J | Package | Through Hole,D4xL12mm |
| Model Number | MOS2CT52A121J |
The MOS and MOSX series are compact power-type resistors featuring metal oxide film (MOS) and metal film (MOSX) construction, respectively. These resistors are designed for high reliability and offer a flame-retardant coating equivalent to UL94 V-0. They are suitable for automatic insertion and various forming processes, including surface mount forming for automated assembly. Compliant with EU RoHS, these resistors are ideal for demanding applications.
| Model | Rated Power | Dimensions (mm) L x C | Max. D | d (Nominal) | Weight (g/1000pcs) | Resistance Range () | Resistance Tolerance | Temperature Coefficient (10/K) | Max. Rated Voltage | Max. Overload Voltage | Withstand Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|
| MOS(X)1/2 | 0.5W | 6.20.5 x 7.1 | 2.50.5 | 0.6 | 250 | MOS: 1047k MOSX: 0.19.1 | F: 1%, G: 2%, J: 5% | 300 | E=PR (V) or 400V | E2.5 (V) | - |
| MOS(X)1 | 1W | 9.01.0 x 11.1 | 3.00.5 | - | 350 | MOS: 1068k MOSX: - | F: 1%, G: 2%, J: 5% | - | 500V | - | - |
| MOS(X)2 | 2W | 12.01.0 x 15.0 | 4.00.5 | 0.8 | 800 | MOS: 10100k MOSX: - | F: 1%, G: 2%, J: 5% | - | 350V | 700V | - |
| MOS(X)3 | 3W | 15.51.0 x 18.0 | 6.01.0 | - | 1,400 | MOS: - MOSX: - | F: 1%, G: 2%, J: 5% | - | 700V | - | - |
| MOS(X)5 | 5W | 24.51.0 x 28.0 | 9.01.0 | - | 5,240 | MOS: - MOSX: - | F: 1%, G: 2%, J: 5% | - | 500V | 1000V | 800V |
| Test Item | Standard Value | Test Method | Guarantee Value | Representative Value |
|---|---|---|---|---|
| Resistance Value | Within specified tolerance | - | - | - |
| Temperature Coefficient of Resistance | Within specified value | +25/+125 | - | - |
| Overload (Short-time) | (2% + 0.1) | 2.5 times rated voltage applied for 5 sec. | 1 | - |
| Resistance to Soldering Heat | 1 | 2605, 10s1s | 0.5 | - |
| Terminal Strength | No exposed wires or loose terminals | 360 twist, 5 times | - | - |
| Thermal Shock | 1 | -55 (30min.) / +155 (30min.) 5 cycles | 0.5 | - |
| Damp Load | (5% + 0.1) | 402, 90%95%RH, 1000h (1.5h ON, 0.5h OFF cycle) | 2.5 | 1.5 |
| Endurance at 70 | (5% + 0.1) | 702, 1000h (1.5h ON, 0.5h OFF cycle) | 2.5 | 1.5 |
| Resistance to Solvents | No external abnormalities, marking legible | 2 min. Isopropyl alcohol ultrasonic cleaning (Output: 0.3W/cm, Frequency: 28kHz, Temp: 355) | - | - |
| Flammability | Does not burn or self-ignite | Fire resistance: Burn for 15s, remove for 15s, 5 cycles. Overload flammability: Apply 2x, 4x, 8x, 16x, 32x rated power (AC) for 1 min each until open circuit. Do not apply voltage > 4x max. operating voltage. | - | - |
| Model | Type | P1 (mm) | H11 (mm) | H21 (mm) | d (Nominal) (mm) | Substrate Hole Pitch (mm) | Substrate Hole Diameter (mm) |
|---|---|---|---|---|---|---|---|
| MOS/MOSX 1/2C | L (Forming) | 10.0 | 5.3 | 4.0 | 0.6 | - | 0.8 |
| MOS/MOSX 1C | L (Forming) | 12.5 | 7.0 | - | 0.8 | - | 1.0 |
| MOS/MOSX 2C | L (Forming) | 15.0 | 6.5 | - | - | - | - |
| MOS/MOSX 3C | L (Forming) | 17.5 | 7.0 | - | - | - | - |
| MOS/MOSX 5C | L (Forming) | 25.0 | 7.0 | - | - | - | - |
| MOS/MOSX 1/2C | M (Forming) | 10.0 | 3.5 | - | 0.6 | - | 0.8 |
| MOS/MOSX 1C | M (Forming) | 12.5 | 3.5 | - | 0.8 | - | 1.0 |
| MOS/MOSX 2C | M (Forming) | 15.0 | 3.5 | - | 0.8 | - | - |
| MOS/MOSX 3C | M (Forming) | 20.0 | 4.6 | - | 0.8 | - | - |
| MOS/MOSX 5C | M (Forming) | 30.0 | 13.0 | - | 0.8 | - | - |
| MOS/MOSX 1C | UCL (Forming) | 13.0 | 17.0max. | 3.5 | 0.8 | 5.0 | 1.0 |
| MOS/MOSX 2C | UCL (Forming) | 14.5 | 18.5max. | 3.5 | - | - | - |
| MOS/MOSX 3C | UCL (Forming) | 20.0max. | 22.0 | 4.0 | - | - | - |
| MOS/MOSX 1C | VTP (Radial Taping) | 9.010 | - | - | 0.65 | 12.71.0 | 1.0 |
| MOS/MOSX 2C | VTP (Radial Taping) | 12.01.0 | - | - | 0.8 | - | - |
| MOS/MOSX 3C | VTP (Radial Taping) | - | - | - | - | - | - |
| MOS/MOSX 1C | N (AMMO Taping) | 14.5 | - | - | 0.8 | 5.0 | - |
| MOS/MOSX 2C | N (AMMO Taping) | 17.0 | - | - | 0.8 | 6.0 | - |
| MOS/MOSX 3C | N (AMMO Taping) | 20.0 | - | - | 0.8 | 7.51.0 | - |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
>>300
Ecer Certification:
Verified Supplier
Company Profile Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining an... Company Profile Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining an...
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