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SHANGHAI FAMOUS TRADE CO.,LTD

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Gallium Nitride Wafer

Manufacturer of a wide range of products which include 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application,8INCH 12INCH 6INCH GaN-On-Si EPI-WAFERS For Power RF LED Application,N Type 4inch Dia100mm Free Standing HVPE ...

Quality 4Inch 6INCH  GaN-on-Si GaN-on-SiC Epi Wafers For RF Application for sale

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4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application

  1. MOQ: 1pcs

  2. Price: By case

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Payment Terms T/T, Western Union
Supply Ability 100pcs
Delivery Time 2-4weeks
Packaging Details single wafer container or 25pcs cassettle box
materials silicon substrate
epi layer thickness 2-7um
Material Gallium Nitride Wafer
Traditional manufacturing using Molecular beam epitaxy
moq 1pcs
Size 4inch/6inch/8inch/12inch
application Micro-LED application
Electronic usage electronics,high-speed switching circuits,infrared circuits
Brand Name ZMSH
Model Number 6/8/12INCH GaN-ON-silicon
Certification rohs
Place of Origin CHINA

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Quality 8INCH 12INCH 6INCH GaN-On-Si EPI-WAFERS  For Power RF LED Application for sale

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8INCH 12INCH 6INCH GaN-On-Si EPI-WAFERS For Power RF LED Application

  1. MOQ: 1pcs

  2. Price: By case

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Payment Terms T/T, Western Union
Supply Ability 100pcs
Delivery Time 2-4weeks
Packaging Details single wafer container or 25pcs cassettle box
Purity 99.9%
Application low temperature alloys
Einecs no. 247-129-0
Grade standard Industrial Grade
Mf GaN
Cas no. 25617-97-4
Brand Name ZMSH
Model Number 6/8/12INCH GaN-ON-silicon
Certification rohs
Place of Origin CHINA

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Quality N Type 4inch Dia100mm Free Standing HVPE GaN Gallium Nitride Wafer for sale

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N Type 4inch Dia100mm Free Standing HVPE GaN Gallium Nitride Wafer

  1. MOQ: 1pc

  2. Price: By case

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Payment Terms L/C, T/T
Delivery Time 2-4weeks
Packaging Details single wafer case in 100-grade cleaning room
Material GaN single crystal
method HVPE
size 4inch
thickness 450um
industry LD,led,laser device,detector,
color white
package single wafer cassette case package by vacuum condition
type n-type
doping si-doped or un-doped
Brand Name zmkj
Model Number GaN-4INCH
Place of Origin CHINA

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Quality Undoped 10X10mm M-Axis HVPE GAN Wafers For semiconducting for sale

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Undoped 10X10mm M-Axis HVPE GAN Wafers For semiconducting

  1. MOQ: 10pc

  2. Price: By case

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Payment Terms L/C, T/T
Delivery Time 2-4weeks
Packaging Details single wafer case in 100-grade cleaning room
Material GaN single crystal
method HVPE
size customized size 10x10
thickness 350um
industry LD,led,laser device,detector,
color white
package single wafer cassette case package by vacuum condition
type n-type
doping si-doped or un-doped
orientation M-axis
Brand Name zmkj
Model Number GaN-10x10.5mm
Place of Origin CHINA

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Quality Crystallized HVPE GaN  Gallium Nitride Wafer For Laser Device for sale

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Crystallized HVPE GaN Gallium Nitride Wafer For Laser Device

  1. MOQ: 1pc

  2. Price: By case

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Payment Terms L/C, T/T
Delivery Time 2-4weeks
Packaging Details single wafer case in 100-grade cleaning room
Material GaN single crystal
method HVPE
size 2inch
thickness 330um
industry LD,led,laser device,detector,
color white
package single wafer cassette case package by vacuum condition
Brand Name zmkj
Model Number GaN-2INCH
Place of Origin CHINA

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Quality Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness for sale

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Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

  1. MOQ: 1pc

  2. Price: By case

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Payment Terms L/C, T/T
Delivery Time 2-4weeks
Packaging Details single wafer case in 100-grade cleaning room
Material GaN single crystal
method HVPE
size 2inch
thickness 330um
industry LD,led,laser device,detector,
color white
package single wafer cassette case package by vacuum condition
Brand Name zmkj
Model Number GaN-2INCH
Place of Origin CHINA

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Quality 2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led for sale

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2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

  1. MOQ: 5pc

  2. Price: By case

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Payment Terms L/C, T/T
Delivery Time 2-4weeks
Packaging Details single wafer case in 100-grade cleaning room
Material GaN epi on Sapphire carrier
method HVPE
size 2inch
thickness 430um
industry LD,led,laser device,detector,
surface single side polished
Brand Name zmkj
Model Number GaN-templates
Place of Origin CHINA

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Quality Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch for sale

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Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

  1. MOQ: 5pc

  2. Price: By case

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Payment Terms L/C, T/T
Delivery Time 2-4weeks
Packaging Details single wafer case in 100-grade cleaning room
Material GaN single crystal
method HVPE
size 2inch or 10x10mm
thickness 430um or customized
industry LD,led,laser device,detector,
package sing wafer cassettle by vacuum package
Brand Name zmkj
Model Number GaN-2INCH 10x10mm
Place of Origin CHINA

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Quality Custom Sapphire Parts Sapphire watch gasket Pure Al2O3 High hardness for high-end watchmarket for sale

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Custom Sapphire Parts Sapphire watch gasket Pure Al2O3 High hardness for high-end watchmarket

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Payment Terms T/T
Delivery Time 2-4 weeks
Material Al2O3 Singal Crystal
Purity 99.999%
Density 3.98 G/cm3
Hardness 9 Mohs
Growth Method Ky
Size Customization
Brand Name ZMSH
Model Number Sapphire part
Place of Origin China

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Quality 2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers for sale

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2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers

  1. MOQ: 5pcs

  2. Price: Usd150.00

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Payment Terms T/T, Western Union
Supply Ability 1000pcs/month
Delivery Time 1-4week;
Packaging Details single wafer container or 25pcs cassette box under 100cleaning room
Material GaN-ON-sapphire epi-wafers
substrate sapphire
size 2-6inch
surface SSP/DSP
OEM MOQ 8PCS
Thickness 430um for 2inch
epi thickness 1-5um
application epitaxial hEMT
Customized ok
Brand Name ZMSH
Model Number 2inch GaN-ON-sapphire GaN Template
Certification rohs
Place of Origin CHINA

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Get in touch with us

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1810,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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